vs-10ut10, vs-10WT10FN www.vishay.com vishay semiconductors revision: 10-aug-11 1 document number: 94647 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance generation 5.0 schottky rectifier, 10 a features ? 175 c high perfo rmance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 applications ? high efficiency smps ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems note (1) measured connecting 2 anode pins product summary package i-pak (to-251aa), d-pak (to-252aa) i f(av) 10 a v r 100 v v f at i f 0.66 v i rm max. 4 ma at 125 c t j max. 175 c diode variation single die e as 54 mj i-pak (to-251aa) d-pak (to-252aa) vs-10ut10 vs-10WT10FN base cathode anode anode cathode 4 3 2 1 base cathode anode anode cathode 4 3 2 1 major ratings and characteristics symbol characteristics values units v rrm 100 v v f 10 apk, t j = 125 c (typical) 0.615 v t j range - 55 to 175 c voltage ratings parameter symbol test conditions vs-10ut10 vs-10WT10FN units maximum dc reverse voltage v r t j = 25 c 100 v absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 159 c, rectangu lar waveform 10 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied (1) 610 a 10 ms sine or 6 ms rect. pulse 110 non-repetitive avalanche energy e as t j = 25 c, i as = 3 a, l = 12 mh 54 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a functi on of time pulse (see fig. 8) i as at t j max. a
vs-10ut10, vs-10WT10FN www.vishay.com vishay semiconductors revision: 10-aug-11 2 document number: 94647 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse width < 300 s, duty cycle < 2 % (2) only 1 anode pin connected fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1)(2) 5 a t j = 25 c 0.630 - v 10 a 0.735 0.810 20 a 0.840 0.890 5 a t j = 125 c 0.530 - 10 a 0.615 0.660 20 a 0.730 0.770 reverse leakage current i rm (1) t j = 25 c v r = rated v r -50a t j = 125 c - 4 ma junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 400 - pf series inductance l s measured lead to lead 5 mm from package body 8.0 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 2 c/w typical thermal resistance, case to heatsink r thcs 0.3 approximate weight 0.3 g 0.01 oz. marking device case style i-pak 10ut10 case style d-pak 10WT10FN i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.2 0.4 0.6 0.8 1.0 1.2 1.6 1.4 1.8 1 100 10 t j = 25 c t j = 125 c t j = 175 c i r - reverse current (ma) v r - reverse voltage (v) 020406080100 0.0001 0.001 0.01 0.1 1 10 100 25 c 175 c 150 c 125 c 100 c 75 c 50 c
vs-10ut10, vs-10WT10FN www.vishay.com vishay semiconductors revision: 10-aug-11 3 document number: 94647 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics c t - junction capacitance (pf) v r - reverse voltage (v) 02040 80 60 100 10 1000 100 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 single pulse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 allowable case temperature (c) i f(av) average forward current (a) 8 6 4 212 10 14 16 0 165 175 180 145 155 160 170 150 square wave (d = 0.50) 80 % rated v r applied see note (1) dc average power loss (w) i f(av) - average forward current (a) 12 9 6 3 15 0 8 10 0 4 6 2 180 120 90 60 30 rms limit dc
vs-10ut10, vs-10WT10FN www.vishay.com vishay semiconductors revision: 10-aug-11 4 document number: 94647 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-re petitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r fig. 8 - reverse bias safe operating area (a valanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. rectangular pulse duration) i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 10 100 1000 10 000 10 1000 100 1 10 100 110 rectangular pulse duration (s) avalanche current (a) 100 t j = 25 c t j = 125 c t j = 175 c 1 10 100 110 rectangular pulse duration (s) avalanche energy (mj) 100 t j = 25 c t j = 125 c t j = 175 c
vs-10ut10, vs-10WT10FN www.vishay.com vishay semiconductors revision: 10-aug-11 5 document number: 94647 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95024 part marking information www.vishay.com/doc?95025 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95026 2 - current rating (10 a) 1 - vishay semiconductors product 3 - package: u = i-pak w = d-pak 4 - t = trench 5 - voltage code (100 v) 7 - d-pak, i-pak: none = tube (75 pieces) d-pak only: tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) 6 - to-252aa (d-pak) device code 5 1 3 2 4 6 7 vs- 10 u t 10 fn trl
document number: 95024 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 i-pak - s, d-pak outline dimensions vishay semiconductors dimensions for i-pak - s in millimeters symbol dimensional requirements min. nom. max. e 6.40 6.60 6.70 l 3.98 4.13 4.28 l4 0.66 0.76 0.86 l5 1.96 2.16 2.36 d 6.00 6.10 6.20 h 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e 2.286 bsc a 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 d1 5.30 - - e1 4.40 - - e d l5 l4 ee a c2 l c h d1 1 2 3 4 b b3 b2 b3 e1
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 95024 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 05-jan-11 outline dimensions vishay semiconductors i-pak - s, d-pak dimensions for d-pak in millimeters and inches notes (1) dimensioning and toleranc ing as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a minimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0. 25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not includ e mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. th ese dimensio ns are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 appl ied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? gauge plane lead tip m 0.010 cab m 32 4 1 e1 d1 min. 0.265 (6.74) min. 0.245 (6.23) min. 0.089 (2.28) min. 0.06 (1.524) 0.488 (12.40) 0.409 (10.40) 0.093 (2.38) 0.085 (2.18) pad layout
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